Interfacial Stoichiometry and Adhesion at Metal/α-Al2O3 Interfaces
نویسندگان
چکیده
منابع مشابه
Band offsets and Fermi level pinning at metal-Al2O3 interfaces
Disparities between the predicted and the measured effective work functions (EWFs) in advanced metal oxide semiconductor devices, or Fermi-level pinning (FLP), have gained significant attention when high-k dielectrics began to emerge. Using a systematic approach for EWF extraction, combined with a comparison to unpinned SiO2 references, it was found that no intrinsic FLP exists in the model die...
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ژورنال
عنوان ژورنال: Journal of the American Ceramic Society
سال: 2011
ISSN: 0002-7820
DOI: 10.1111/j.1551-2916.2011.04405.x